1. High color rendering index. This kind of white LED light bead excites the blue light of the phosphor through the 2835 light t bead, and the blue peak intensity will not be too high. Moreover, it can also output all light within the wavelength range of visible light, so the color rendering index is relatively high, and the ideal white can be achieved like the sun. Moreover, the red color rendering index R9 is particularly high, and the average color rendering index RA also reaches 95.

2. High luminous efficiency. What is the difference between 2835 lamp beads and ordinary LED lamp beads? (1) 2835 light bead chip is triangular, and the shape of ordinary LED light bead chip is quadrangular. In contrast, the light emitted by the light-emitting layer of triangular LED light bead chip irradiates outside the chip with higher efficiency (extraction light efficiency). The crystal quality and light extraction efficiency of 2835 lamp beads are very high, so the light output can reach 84% in addition to power. WPE of ordinary blue LED is only 50~60%. (2) 2835 lamp beads are made of GaN substrate, which is a kind of GaN semiconductor superimposed on the GaN substrate to make 2835 lamp bead chip. It belongs to ganongan LED lamp beads. The GaN semiconductor layer has relatively high crystallization quality, so 2835 lamp beads have high luminous efficiency and fast efficiency improvement. (3) Purple LED bulb chips are not prone to drop. The reduction of luminous efficiency is a phenomenon that results in the reduction of luminous efficiency when the driving current density is increased in order to improve the luminous intensity, and it is also a major problem when improving the brightness. Ganongan products have high crystal quality, and compared with sapphire substrate products, light efficiency is not easy to decline. Therefore, compared with sapphire substrate products, GaN substrate products can increase the current density to 5~10 times. (4) Ordinary blue LED light bead chip is made of sapphire substrate. Gan semiconductors have different lattice constants from sapphire, and are prone to crystal defects called dislocation. Gan substrates have almost no difference in crystallization constants, so it is difficult to produce crystallization defects. Compared with products with sapphire substrate, the dislocation density can be reduced to about 1/1000.